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GE Fanuc VMIVME-5565: Advanced Reflective Memory Module

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The GE Fanuc VMIVME-5565 Reflective Memory is an essential component for high-performance industrial control systems, offering unparalleled reliability and efficiency in data storage and retrieval.

Memory Capacity:2GB DDR3 SDRAM

Data Transfer Rate:1600 MB/s

Operating Temperature Range:-40°C to +85°C

Form Factor:CompactPCI

Power Consumption:6W

    The GE Fanuc VMIVME-5565 Reflective Memory Module is engineered to deliver exceptional performance and reliability in demanding industrial control environments. This module leverages advanced reflective memory technology, ensuring fast data access speeds and robust protection against transient power fluctuations.

    Designed with a compact PCI form factor, the VMIVME-5565 seamlessly integrates into a wide range of systems, making it an ideal choice for space-constrained applications. It boasts a substantial 256 MB DDR SDRAM capacity, providing ample storage for critical control processes and data.

    Featuring a 133 MHz bus speed and a 66 MHz operating frequency, this module ensures efficient data transfer rates and low latency, crucial for real-time control systems. Its 5 V operating voltage and 66 MHz clock rate are optimized for compatibility with various industrial systems, enhancing its versatility.

    Operating within an extended temperature range from -40°C to +85°C, the VMIVME-5565 is built to withstand harsh environmental conditions commonly encountered in industrial settings. This durability, combined with its low power consumption of just 5 W, makes it energy-efficient and suitable for applications where power supply stability is paramount.

    Equipped with reflective memory technology, the module provides enhanced data integrity and system resilience. In the event of a power interruption or surge, the reflective memory ensures that data remains intact and can be quickly restored upon system recovery, minimizing downtime and safeguarding critical operations.

GE Fanuc VMIVME-5565 Reflective Memory




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